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| www.irf.com 1 AUIRFZ48Z AUIRFZ48Zs hexfet ? power mosfet automotive grade pd - 97612a features advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. g d s gate drain source d 2 pak AUIRFZ48Zs s d g d to-220ab AUIRFZ48Z s d g d s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss 55v r ds(on) max. 11m i d 61a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case ) mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.64 c/w r cs case-to-sink, flat, greased surface 0.50 ??? r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? 40 10 lbf?in (1.1n?m) 91 0.61 20 73 120 see fig.12a,12b,15,16 300 -55 to + 175 7.2 max. 61 43 240
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l =0.11mh, r g = 25 , i as = 37a, v gs =10v. part not recommended for use above this value. i sd 37a, di/dt 920a/ s, v dd v (br)dss , t j 175c. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population, starting t j = 25c, l =0.11mh, r g = 25 , i as = 37a, v gs =10v. this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. r is rated at t j of approximately 90c. s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? / . 0.0 / ( . 11 v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 24 ??? ??? s i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 43 64 nc q gs gate-to-source charge ??? 11 16 q gd gate-to-drain ("miller") charge ??? 16 24 t d(on) turn-on delay time ??? 15 ??? ns t r rise time ??? 69 ??? t d(off) turn-off delay time ??? 35 ??? t f fall time ??? 39 ??? l d internal drain inductance ??? 4.5 ??? nh between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1720 ??? pf c oss output capacitance ??? 300 ??? c rss reverse transfer capacitance ??? 160 ??? c oss output capacitance ??? 1020 ??? c oss output capacitance ??? 230 ??? c oss eff. effective output capacitance ??? 380 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 61 (body diode) a i sm pulsed source current ??? ??? 240 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 20 31 ns q rr reverse recovery charge ??? 13 20 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 37a r g = 12 i d = 37a v ds = 25v, i d = 37a v dd = 28v i d = 37a v gs = 20v v gs = -20v v ds = 44v v gs = 10v conditions t j = 25c, i f = 37a, v dd = 30v di/dt = 100a/ s t j = 25c, i s = 37a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 10v mosfet symbol v gs = 0v v ds = 25v v gs = 0v, v ds = 44v, ? = 1.0mhz conditions v gs = 0v, v ds = 0v to 44v ? = 1.0mhz, see fig. 5 v gs = 0v, v ds = 1.0v, ? = 1.0mhz www.irf.com 3 !"#"$ $ %& &' & qualification information ? to-220ab n/a d 2 pak msl1 charged device model class c5 (+/- 1125v) ??? aec-q101-005 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 425v) ??? aec-q101-002 human body model class h1b (+/- 1000v) ??? aec-q101-001 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 30 s pulse width tj = 25c 4.5v 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 30 s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 30 s pulse width 0 10203040 i d ,drain-to-source current (a) 0 10 20 30 40 50 60 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v v ds = 28v v ds = 11v i d = 37a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100 sec tc = 25c tj = 175c single pulse a nce 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 10 20 30 40 50 60 70 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 37a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.9848 0.000451 0.6546 0.002487 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri www.irf.com 7 q g q gs q gd v g charge "#( fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.5a 4.9a bottom 37a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 37a www.irf.com 9 fig 17. )*+ ',' - for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period . . + - + + + - - - ? ? ! "#"" ? $ % % ? "#""& # v ds 90% 10% v gs t d(on) t r t d(off) t f '( 1 ) $ 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms 10 www.irf.com note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab packages are not recommended for surface mount application. !! !! + /0/ 1101 *1* 0 '234 ) 5 3 & 3 www.irf.com 11 " #$%& " # $%& note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ' !! !! + /0/ 1101 *1* 0 '234 ) 5 3 & 3 12 www.irf.com " ( ) dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. www.irf.com 13 ordering information base part package type standard pack complete part number form quantity AUIRFZ48Z to-220 tube 50 AUIRFZ48Z AUIRFZ48Zs d2pak tube 50 AUIRFZ48Zs tape and reel left 800 AUIRFZ48Zstrl tape and reel right 800 AUIRFZ48Zstrr 14 www.irf.com ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! . ! ! ) ! & ! ! - ) ! / 0 - 0 . & ) - ! 1 2 $ 2$ / 2$ ( ! 0 2$ . ( 0 * ( ! /1'+/ 34565 ( #$%! 0 . ( ! 4 2 - ! ! "# $ "% $ &' ()*+ ,- |
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